Properties of III-V Quantum Wells and Superlattices

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The characterization and precisely controlled building of atomic-scale mutilayers have been the subject of intensive R&D worldwide. Nanometric structures based on III-V semiconductors have attracted particular attention. Since 1970, around 15,000 papers have been published in all, of which 10,000 have appeared in the last 6 years. The resulting improved materials control is enabling engineers to achieve major improvements in the performance of microelectronic and optoelectronic devices such as QW lasers, tunnelling devices, ...

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